Journal article
Near-surface spectrally stable nitrogen vacancy centres engineered in single crystal diamond
A Stacey, DA Simpson, TJ Karle, BC Gibson, VM Acosta, Z Huang, KMC Fu, C Santori, RG Beausoleil, LP McGuinness, K Ganesan, S Tomljenovic-Hanic, AD Greentree, S Prawer
Advanced Materials | Published : 2012
Abstract
A method for engineering thin (<100 nm) layers of homoepitaxial diamond containing high quality, spectrally stable, isolated nitrogen-vacancy (NV) centres is reported. The photoluminescence excitation linewidth of the engineered NVs are as low as 140 MHz, at temperatures below 12 K, while the spin properties are at a level suitable for quantum memory and spin register applications. This methodology of NV fabrication is an important step toward scalable and practical diamond based photonic devices suitable for quantum information processing. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Related Projects (2)
Grants
Awarded by Australian Research Council
Funding Acknowledgements
The authors would like to acknowledge Dr Desmond Lau for providing a schematic image of the NV centre. This work was supported by the Australian Research Council under the Discovery Project (DP0880466, DP1096288) and Linkage Project (LP100100524) schemes. B.C.G. acknowledges the support of an ARC Future Fellowship (project number FT110100225). S.T-H. is supported by the ARC Australian Research Fellowship (project number DP1096288). A.D.G. acknowledges the support of an ARC QEII Fellowship (project number DP0880466).